Non-volatile resistive switching mechanism in single-layer MoS₂ memristors: insights from ab initio modelling of Au and MoS₂ interfaces.

ABSTRACT: Non-volatile memristive devices based on two-dimensional (2D) layered materials provide an attractive alternative to conventional flash memory chips. Single-layer semiconductors, such as monolayer molybdenum disulphide (ML-MoS₂), enable the aggressive downscaling of devices towards greater system integration density. The "atomristor", the most compact device to date, has been shown to undergo a resistive switching between its high-resistance (HRS) and low-resistance (LRS) states of several orders of magnitude. The main hypothesis behind its working mechanism relies on the migration of sulphur vacancies in the proximity of the metal contact during device operation, thus inducing the variation of the Schottky barrier at the metal-semiconductor interface. However, the interface phy

SUBMITTER: Boschetto G 

PROVIDER: S-EPMC10408618 | biostudies-literature | 2023 Aug

REPOSITORIES: biostudies-literature