Quantum Spin Hall Effect in Two-Monolayer-Thick InN/InGaN Coupled Multiple Quantum Wells.

ABSTRACT: In this study, we present a theoretical study of the quantum spin Hall effect in InN/InGaN coupled multiple quantum wells with the individual well widths equal to two atomic monolayers. We consider triple and quadruple quantum wells in which the In content in the interwell barriers is greater than or equal to the In content in the external barriers. To calculate the electronic subbands in these nanostructures, we use the eight-band k∙p Hamiltonian, assuming that the effective spin-orbit interaction in InN is negative, which represents the worst-case scenario for achieving a two-dimensional topological insulator. For triple quantum wells, we find that when the In contents of the external and interwell barriers are the same and the widths of the internal barriers are equal to two mono

SUBMITTER: Lepkowski SP 

PROVIDER: S-EPMC10421133 | biostudies-literature | 2023 Jul

REPOSITORIES: biostudies-literature