Yttrium Doping Effects on Ferroelectricity and Electric Properties of As-Deposited Hf_1-xZr_xO₂ Thin Films via Atomic Layer Deposition.

ABSTRACT: Hf_1-xZr_xO₂ (HZO) thin films are versatile materials suitable for advanced ferroelectric semiconductor devices. Previous studies have shown that the ferroelectricity of HZO thin films can be stabilized by doping them with group III elements at low concentrations. While doping with Y improves the ferroelectric properties, there has been limited research on Y-HZO thin films fabricated using atomic layer deposition (ALD). In this study, we investigated the effects of Y-doping cycles on the ferroelectric and electrical properties of as-deposited Y-HZO thin films with varying compositions fabricated through ALD. The Y-HZO thin films were stably crystallized without the need for post-thermal treatment and exhibited transition behavior depending on the Y-doping cyc

SUBMITTER: Oh Y 

PROVIDER: S-EPMC10421259 | biostudies-literature | 2023 Jul

REPOSITORIES: biostudies-literature