Annealing-induced phase transformation in In₁₀Se₇₀Te₂₀ thin films and its structural, optical and morphological changes for optoelectronic applications.

ABSTRACT: In₂Se₃ and In₂Te₃ have great importance in various device fabrications. The present report is based on the annealing-induced phase formation of both In₂Se₃ and In₂Te₃ from In₁₀Se₇₀Te₂₀ thin films at different annealing temperatures as found from the XRD analysis and well supported by the Raman study. The average crystallite size increased with a decrease in the dislocation density. The surface morphology changed with annealing and increased in particle size as noticed from the FESEM images. The uniform distribution and presence of constituent elements in the film were verified using EDX data. The increase in transmittance is accompanied by a decrease in extinction coeffi

SUBMITTER: Giri S 

PROVIDER: S-EPMC10442775 | biostudies-literature | 2023 Aug

REPOSITORIES: biostudies-literature