Effect of Rapid Thermal Annealing on Si-Based Dielectric Films Grown by ICP-CVD.

ABSTRACT: Silicon nitride, silicon oxide, and silicon oxynitride thin films were deposited on the Si substrate by inductively coupled plasma chemical vapor deposition and annealed at 1100 °C for 3 min in an Ar environment. Silicon nitride and silicon oxide films deposited at ratios of the reactant flow rates of SiH₄/N₂ = 1.875 and SiH₄/N₂O = 3, respectively, were Si-rich, while Si excess for the oxynitride film (SiH₄/N₂/N₂O = 3:2:2) was not found. Annealing resulted in a thickness decrease and structural transformation for SiO_x and SiN_x films. Nanocrystalline phases of Si as well as α- and β-Si₃N₄ were found in the annealed silicon nitride film. Compared to oxide and

SUBMITTER: Parkhomenko I 

PROVIDER: S-EPMC10448691 | biostudies-literature | 2023 Aug

REPOSITORIES: biostudies-literature