Subthreshold Conduction of Disordered ZnO-Based Thin-Film Transistors.

ABSTRACT: This study presents the disorderedness effects on the subthreshold characteristics of atomically deposited ZnO thin-film transistors (TFTs). Bottom-gate ZnO TFTs show n-type enhancement-mode transfer characteristics but a gate-voltage-dependent, degradable subthreshold swing. The charge-transport characteristics of the disordered semiconductor TFTs are severely affected by the localized trap states. Thus, we posit that the disorderedness factors, which are the interface trap capacitance and the diffusion coefficient of electrons, would result in the degradation. Considering the factors as gate-dependent power laws, we derive the subthreshold current-voltage relationship for disordered semiconductors. Notably, the gate-dependent disorderedness parameters are successfully deduced and consist

SUBMITTER: Yoon M 

PROVIDER: S-EPMC10456918 | biostudies-literature | 2023 Aug

REPOSITORIES: biostudies-literature