Metal-Induced Trap States: The Roles of Interface and Border Traps in HfO₂/InGaAs.

ABSTRACT: By combining capacitance-voltage measurements, TCAD simulations, and X-ray photoelectron spectroscopy, the impact of the work function of the gate metals Ti, Mo, Pd, and Ni on the defects in bulk HfO₂ and at the HfO₂/InGaAs interfaces are studied. The oxidation at Ti/HfO₂ is found to create the highest density of interface and border traps, while a stable interface at the Mo/HfO₂ interface leads to the smallest density of traps in our sample. The extracted values of D_it of 1.27 × 10¹¹ eV^-1cm^-2 for acceptor-like traps and 3.81 × 10¹¹ eV^-1cm^-2 for donor-like traps are the lowest reported to date. The density and lifetimes of border traps in HfO₂ are examined usi

SUBMITTER: Do HB 

PROVIDER: S-EPMC10456933 | biostudies-literature | 2023 Aug

REPOSITORIES: biostudies-literature