Multilevel resistive switching memory in lead-free double perovskite La 2 NiFeO 6 films.

ABSTRACT: Dense and flat La2NiFeO6(LNFO) films were fabricated on the indium tin oxide-coated glass (ITO/glass) substrate by sol-gel method. The bipolar resistive switching behavior (BRS) could be maintained in 100 cycles and remained after 30 days, indicating that the LNFO-based RS device owned good memory stability. Surprisingly, the multilevel RS characteristics were firstly observed in the Au/LNFO/ITO/glass device. The high resistance states (HRSs) and low resistance state (LRS) with the maximum ratio of ∼ 500 could be remained stably in 900 s and 130 cycles, demonstrating the fine retention and endurance ability of this LNFO-based RS device. The BRS behavior of Au/LNFO/ITO/glass devices primarily obeyed the SCLC mechanism controlled by oxygen vacancies (OVs) dispersed in the LNFO layer. Under t

SUBMITTER: Qin Y 

PROVIDER: S-EPMC10465475 | biostudies-literature | 2023 Aug

REPOSITORIES: biostudies-literature