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Resistive switching and battery-like characteristics in highly transparent Ta₂O₅/ITO thin-films.

ABSTRACT: Highly transparent resistive-switching (RS) devices were fabricated by growing amorphous tantalum pentoxide (a-Ta₂O₅) and indium tin oxide (a-ITO) thin films on barium-borosilicate glass (7059) substrates, using electron beam evaporation. These layers exhibited the transmittance greater than ~ 85% in the full visible region and showed RS behavior and battery-like IV characteristics. The overall characteristics of RS can be tuned using the top electrode and the thickness of a-Ta₂O₅. Thinner films showed a conventional RS behavior, while thicker films with metal electrodes showed a battery-like characteristic, which could be explained by additional redox reactions and non-Faradaic capacitive effects. Devices having battery-like IV characteristics showed higher enhanced, retention and low-operation current.

SUBMITTER: Khone D

PROVIDER: S-EPMC10471767 | biostudies-literature | 2023 Aug

REPOSITORIES: biostudies-literature

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Resistive switching and battery-like characteristics in highly transparent Ta2O5/ITO thin-films.

Khone Darshika D Kumar Sandeep S Balal Mohammad M Barman Sudipta Roy SR Kumar Sunil S Rana Abhimanyu Singh AS

Scientific reports 20230831 1

Highly transparent resistive-switching (RS) devices were fabricated by growing amorphous tantalum pentoxide (a-Ta2O5) and indium tin oxide (a-ITO) thin films on barium-borosilicate glass (7059) substrates, using electron beam evaporation. These layers exhibited the transmittance greater than ~ 85% in the full visible region and showed RS behavior and battery-like IV characteristics. The overall characteristics of RS can be tuned using the top electrode and the thickness of ...[more]

PMID: 37652968

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