Large and tunable magnetoresistance in van der Waals ferromagnet/semiconductor junctions.

ABSTRACT: Magnetic tunnel junctions (MTJs) with conventional bulk ferromagnets separated by a nonmagnetic insulating layer are key building blocks in spintronics for magnetic sensors and memory. A radically different approach of using atomically-thin van der Waals (vdW) materials in MTJs is expected to boost their figure of merit, the tunneling magnetoresistance (TMR), while relaxing the lattice-matching requirements from the epitaxial growth and supporting high-quality integration of dissimilar materials with atomically-sharp interfaces. We report TMR up to 192% at 10 K in all-vdW Fe₃GeTe₂/GaSe/Fe₃GeTe₂ MTJs. Remarkably, instead of the usual insulating spacer, this large TMR is realized with a vdW semiconductor GaSe. Integration of semiconductors into the

SUBMITTER: Zhu W 

PROVIDER: S-EPMC10477182 | biostudies-literature | 2023 Sep

REPOSITORIES: biostudies-literature