(Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission.

ABSTRACT: Aluminium Gallium Nitride (Al_yGa_1-yN) quantum dots (QDs) with thin sub-µm Al_xGa_1-xN layers (with x > y) were grown by molecular beam epitaxy on 3 nm and 6 nm thick hexagonal boron nitride (h-BN) initially deposited on c-sapphire substrates. An AlN layer was grown on h-BN and the surface roughness was investigated by atomic force microscopy for different deposited thicknesses. It was shown that for thicker AlN layers (i.e., 200 nm), the surface roughness can be reduced and hence a better surface morphology is obtained. Next, Al_yGa_1-yN QDs embedded in Al_0.7Ga_0.3N cladding layers were grown on the AlN and investigated by atomic force microscopy. Furthermore, X-ray diffraction measurements were conducted to

SUBMITTER: Zaiter A 

PROVIDER: S-EPMC10489961 | biostudies-literature | 2023 Aug

REPOSITORIES: biostudies-literature