Voltage control of magnetism in Fe_3-xGeTe₂/In₂Se₃ van der Waals ferromagnetic/ferroelectric heterostructures.

ABSTRACT: We investigate the voltage control of magnetism in a van der Waals (vdW) heterostructure device consisting of two distinct vdW materials, the ferromagnetic Fe_3-xGeTe₂ and the ferroelectric In₂Se₃. It is observed that gate voltages applied to the Fe_3-xGeTe₂/In₂Se₃ heterostructure device modulate the magnetic properties of Fe_3-xGeTe₂ with significant decrease in coercive field for both positive and negative voltages. Raman spectroscopy on the heterostructure device shows voltage-dependent increase in the in-plane In₂Se₃ and Fe_3-xGeTe₂ lattice constants for both voltage polarities. Thus, the voltage-dependent decrease in the Fe_3-x

SUBMITTER: Eom J 

PROVIDER: S-EPMC10497543 | biostudies-literature | 2023 Sep

REPOSITORIES: biostudies-literature