The Influence of Capping Layers on Tunneling Magnetoresistance and Microstructure in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions upon Annealing.

ABSTRACT: This study investigates the effects of annealing on the tunnel magnetoresistance (TMR) ratio in CoFeB/MgO/CoFeB-based magnetic tunnel junctions (MTJs) with different capping layers and correlates them with microstructural changes. It is found that the capping layer plays an important role in determining the maximum TMR ratio and the corresponding annealing temperature (T_ann). For a Pt capping layer, the TMR reaches ~95% at a T_ann of 350 °C, then decreases upon a further increase in T_ann. A microstructural analysis reveals that the low TMR is due to severe intermixing in the Pt/CoFeB layers. On the other hand, when introducing a Ta capping layer with suppressed diffusion into the CoFeB layer, the TMR continues to increase with T

SUBMITTER: Kim G 

PROVIDER: S-EPMC10534786 | biostudies-literature | 2023 Sep

REPOSITORIES: biostudies-literature