Atomically Thin Amorphous Indium-Oxide Semiconductor Film Developed Using a Solution Process for High-Performance Oxide Transistors.

ABSTRACT: High-performance oxide transistors have recently attracted significant attention for use in various electronic applications, such as displays, sensors, and back-end-of-line transistors. In this study, we demonstrate atomically thin indium-oxide (InO_x) semiconductors using a solution process for high-performance thin-film transistors (TFTs). To achieve superior field-effect mobility and switching characteristics in TFTs, the bandgap and thickness of the InO_x were tuned by controlling the InO_x solution molarity. As a result, a high field-effect mobility and on/off-current ratio of 13.95 cm² V^-1 s^-1 and 1.42 × 10¹⁰, respectively, were achieved using 3.12-nanometer-thick InO_x. Ou

SUBMITTER: Park JH 

PROVIDER: S-EPMC10536517 | biostudies-literature | 2023 Sep

REPOSITORIES: biostudies-literature