Spatially-Resolved Thermometry of Filamentary Nanoscale Hot Spots in TiO₂ Resistive Random Access Memories to Address Device Variability.

ABSTRACT: Resistive random access memories (RRAM), based on the formation and rupture of conductive nanoscale filaments, have attracted increased attention for application in neuromorphic and in-memory computing. However, this technology is, in part, limited by its variability, which originates from the stochastic formation and extreme heating of its nanoscale filaments. In this study, we used scanning thermal microscopy (SThM) to assess the effect of filament-induced heat spreading on the surface of metal oxide RRAMs with different device designs. We evaluate the variability of TiO₂ RRAM devices with area sizes of 2 × 2 and 5 × 5 μm². Electrical characterization shows that the variability indicated by the standard deviation of the forming voltage is ∼2 times larger for 5 × 5 μ

SUBMITTER: Swoboda T 

PROVIDER: S-EPMC10537448 | biostudies-literature | 2023 Sep

REPOSITORIES: biostudies-literature