Effect of oxygen vacancy and Si doping on the electrical properties of Ta₂O₅ in memristor characteristics.

ABSTRACT: The resistive switching behavior in Ta₂O₅ based memristors is largely controlled by the formation and annihilation of conductive filaments (CFs) that are generated by the migration of oxygen vacancies (OVs). To gain a fundamental insight on the switching characteristics, we have systematically investigated the electrical transport properties of two different Ta₂O₅ polymorphs ([Formula: see text]-Ta₂O₅ and λ-Ta₂O₅), using density functional theory calculations, and associated vacancy induced electrical conductivity using Boltzmann transport theory. The projected band structure and DOS in a few types of OVs, (two-fold (O_2fV), three-fold (O_3fV), interlayer (O_ILV), and disto

SUBMITTER: Islam MS 

PROVIDER: S-EPMC10547760 | biostudies-literature | 2023 Oct

REPOSITORIES: biostudies-literature