Defect-Free Few-Layer M₄ C₃ T_x (M = V, Nb, Ta) MXene Nanosheets: Synthesis, Characterization, and Physicochemical Properties.

ABSTRACT: High-quality few-layer M₄ C₃ T_x (M = V, Nb, Ta) MXenes are very important for applications and are necessary for clarifying their physicochemical properties. However, the difficulty in etching for themselves and the existence of MC/MC_1-δ and M-Al alloy impurities in their M₄ AlC₃ precursors seriously hinder the achievement of defect-free few-layer M₄ C₃ T_x (M = V, Nb, Ta) MXenes nanosheets. Herein, three different defect-free few-layer M₄ C₃ T_x (M = V, Nb, Ta) nanosheets are obtained by using a universal synthesis strategy of calcination, selective etching, intercalation, and exfoliation. Comprehensive characterizations confirm their defect-free few-layer stru

SUBMITTER: Huang Y 

PROVIDER: S-EPMC10558640 | biostudies-literature | 2023 Oct

REPOSITORIES: biostudies-literature