Interfacial Properties of the SnO/κ-Ga₂O₃ p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga₂O₃.

ABSTRACT: The interfacial properties of a planar SnO/κ-Ga₂O₃ p-n heterojunction have been investigated by capacitance-voltage (C-V) measurements following a methodological approach that allows consideration of significant combined series resistance and parallel leakage effects. Single-frequency measurements were carried out in both series- and parallel-model measurement configurations and then compared to the dual-frequency approach, which permits us to evaluate the depletion capacitance of diode independently of leakage conductance and series resistance. It was found that in the bias region, where the dissipation factor was low enough, they give the same results and provide reliable experimental C-V data. The doping profile extracted from the C</

SUBMITTER: Rajabi Kalvani P 

PROVIDER: S-EPMC10561148 | biostudies-literature | 2023 Oct

REPOSITORIES: biostudies-literature