Effect of electrode materials on resistive switching behaviour of NbO_x-based memristive devices.

ABSTRACT: Memristive devices that rely on redox-based resistive switching mechanism have attracted great attention for the development of next-generation memory and computing architectures. However, a detailed understanding of the relationship between involved materials, interfaces, and device functionalities still represents a challenge. In this work, we analyse the effect of electrode metals on resistive switching functionalities of NbO_x-based memristive cells. For this purpose, the effect of Au, Pt, Ir, TiN, and Nb top electrodes was investigated in devices based on amorphous NbO_x grown by anodic oxidation on a Nb substrate exploited also as counter electrode. It is shown that the choice of the metal electrode regulates electronic transport properties of metal-insulator inte

SUBMITTER: Leonetti G 

PROVIDER: S-EPMC10562416 | biostudies-literature | 2023 Oct

REPOSITORIES: biostudies-literature