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Carrier Modulation via Tunnel Oxide Passivating at Buried Perovskite Interface for Stable Carbon-Based Solar Cells.


ABSTRACT: Carbon-based perovskite solar cells (C-PSCs) have the impressive characteristics of good stability and potential commercialization. The insulating layers play crucial roles in charge modulation at the buried perovskite interface in mesoporous C-PSCs. In this work, the effects of three different tunnel oxide layers on the performance of air-processed C-PSCs are scrutinized to unveil the passivating quality. Devices with ZrO2-passivated TiO2 electron contacts exhibit higher power conversion efficiencies (PCEs) than their Al2O3 and SiO2 counterparts. The porous feature and robust chemical properties of ZrO2 ensure the high quality of the perovskite absorber, thus ensuring the high repeatability of our devices. An efficiency level of 14.96% puts our device among the state-of-the-art hole-conductor-free C-PSCs, and our unencapsulated device maintains 88.9% of its initial performance after 11,520 h (480 days) of ambient storage. These results demonstrate that the function of tunnel oxides at the perovskite/electron contact interface is important to manipulate the charge transfer dynamics that critically affect the performance and stability of C-PSCs.

SUBMITTER: Xiao Y 

PROVIDER: S-EPMC10574625 | biostudies-literature | 2023 Sep

REPOSITORIES: biostudies-literature

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Carrier Modulation via Tunnel Oxide Passivating at Buried Perovskite Interface for Stable Carbon-Based Solar Cells.

Xiao Yuqing Y   Zhang Huijie H   Zhao Yue Y   Liu Pei P   Kondamareddy Kiran Kumar KK   Wang Changlei C  

Nanomaterials (Basel, Switzerland) 20230926 19


Carbon-based perovskite solar cells (C-PSCs) have the impressive characteristics of good stability and potential commercialization. The insulating layers play crucial roles in charge modulation at the buried perovskite interface in mesoporous C-PSCs. In this work, the effects of three different tunnel oxide layers on the performance of air-processed C-PSCs are scrutinized to unveil the passivating quality. Devices with ZrO<sub>2</sub>-passivated TiO<sub>2</sub> electron contacts exhibit higher p  ...[more]

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