Strain Engineering for Enhancing Carrier Mobility in MoTe₂ Field-Effect Transistors.

ABSTRACT: Molybdenum ditelluride (MoTe₂ ) exhibits immense potential in post-silicon electronics due to its bandgap comparable to silicon. Unlike other 2D materials, MoTe₂ allows easy phase modulation and efficient carrier type control in electrical transport. However, its unstable nature and low-carrier mobility limit practical implementation in devices. Here, a deterministic method is proposed to improve the performance of MoTe₂ devices by inducing local tensile strain through substrate engineering and encapsulation processes. The approach involves creating hole arrays in the substrate and using atomic layer deposition grown Al₂ O₃ as an additional back-gate dielectric layer on SiO₂ . The MoTe₂ channel is passivated with

SUBMITTER: Shafi AM 

PROVIDER: S-EPMC10582429 | biostudies-literature | 2023 Oct

REPOSITORIES: biostudies-literature