Amorphous BN-Based Synaptic Device with High Performance in Neuromorphic Computing.

ABSTRACT: The von Neumann architecture has faced challenges requiring high-fulfillment levels due to the performance gap between its processor and memory. Among the numerous resistive-switching random-access memories, the properties of hexagonal boron nitride (BN) have been extensively reported, but those of amorphous BN have been insufficiently explored for memory applications. Herein, we fabricated a Pt/BN/TiN device utilizing the resistive switching mechanism to achieve synaptic characteristics in a neuromorphic system. The switching mechanism is investigated based on the I-V curves. Utilizing these characteristics, we optimize the potentiation and depression to mimic the biological synapse. In artificial neural networks, high-recognition rates are achieved using linear conductance updates in a m

SUBMITTER: Pyo J 

PROVIDER: S-EPMC10608025 | biostudies-literature | 2023 Oct

REPOSITORIES: biostudies-literature