Negative Photoconductivity in 2D α-MoO₃/Ir Self-Powered Photodetector: Impact of Post-Annealing.

ABSTRACT: Surface plasmon technology is regarded as having significant potential for the enhancement of the performance of 2D oxide semiconductors, especially in terms of improving the light absorption of 2D MoO₃ photodetectors. An ultrathin MoO₃/Ir/SiO₂/Si heterojunction Schottky self-powered photodetector is introduced here to showcase positive photoconductivity. In wafer-scale production, the initial un-annealed Mo/2 nm Ir/SiO₂/Si sample displays a sheet carrier concentration of 5.76 × 10¹¹/cm², which subsequently increases to 6.74 × 10¹²/cm² after annealing treatment, showing a negative photoconductivity behavior at a 0 V bias voltage. This suggests that annealing enhances the diffusion of Ir into the MoO₃ layer, result

SUBMITTER: Basyooni-M Kabatas MA 

PROVIDER: S-EPMC10608330 | biostudies-literature | 2023 Oct

REPOSITORIES: biostudies-literature