Localization and interaction of interlayer excitons in MoSe₂/WSe₂ heterobilayers.

ABSTRACT: Transition metal dichalcogenide (TMD) heterobilayers provide a versatile platform to explore unique excitonic physics via the properties of the constituent TMDs and external stimuli. Interlayer excitons (IXs) can form in TMD heterobilayers as delocalized or localized states. However, the localization of IX in different types of potential traps, the emergence of biexcitons in the high-excitation regime, and the impact of potential traps on biexciton formation have remained elusive. In our work, we observe two types of potential traps in a MoSe₂/WSe₂ heterobilayer, which result in significantly different emission behavior of IXs at different temperatures. We identify the origin of these traps as localized defect states and the moiré potential of the TMD heterobilayer. F

SUBMITTER: Fang H 

PROVIDER: S-EPMC10616232 | biostudies-literature | 2023 Oct

REPOSITORIES: biostudies-literature