An Amorphous Native Oxide Shell for High Bias-Stress Stability Nanowire Synaptic Transistor.

ABSTRACT: The inhomogeneous native oxide shells on the surfaces of III-V group semiconductors typically yield inferior and unstable electrical properties metrics, challenging the development of next-generation integrated circuits. Herein, the native GaO_x shells are profitably utilized by a simple in-situ thermal annealing process to achieve high-performance GaSb nanowires (NWs) field-effect-transistors (FETs) with excellent bias-stress stability and synaptic behaviors. By an optimal annealing time of 5 min, the as-constructed GaSb NW FET demonstrates excellent stability with a minimal shift of transfer curve (ΔV_th ≈ 0.54 V) under a 60 min gate bias, which is far more stable than that of pristine GaSb NW FET (ΔV_th ≈ 8.2 V). When the high bias-stress stability NW FET i

SUBMITTER: Zhuang X 

PROVIDER: S-EPMC10625101 | biostudies-literature | 2023 Nov

REPOSITORIES: biostudies-literature