Sharp Transformation across Morphotropic Phase Boundary in Sub-6 nm Wake-Up-Free Ferroelectric Films by Atomic Layer Technology.

ABSTRACT: Atomic layer engineering is investigated to tailor the morphotropic phase boundary (MPB) between antiferroelectric, ferroelectric, and paraelectric phases. By increasing the HfO₂ seeding layer with only 2 monolayers, the overlying ZrO₂ layer experiences the dramatic phase transition across the MPB. Conspicuous ferroelectric properties including record-high remanent polarization (2P_r ≈ 60 µC cm^-2 ), wake-up-free operation, and high compatibility with advanced semiconductor technology nodes, are achieved in the sub-6 nm thin film. The prominent antiferroelectric to ferroelectric phase transformation is ascribed to the in-plane tensile stress introduced into ZrO₂ by the HfO₂ seeding layer. Based on the high-resolution and high-

SUBMITTER: Chuang CH 

PROVIDER: S-EPMC10646279 | biostudies-literature | 2023 Sep

REPOSITORIES: biostudies-literature