Integrated Logic Circuits Based on Wafer-Scale 2D-MoS₂ FETs Using Buried-Gate Structures.

ABSTRACT: Two-dimensional (2D) transition-metal dichalcogenides (TMDs) materials, such as molybdenum disulfide (MoS₂), stand out due to their atomically thin layered structure and exceptional electrical properties. Consequently, they could potentially become one of the main materials for future integrated high-performance logic circuits. However, the local back-gate-based MoS₂ transistors on a silicon substrate can lead to the degradation of electrical characteristics. This degradation is caused by the abnormal effect of gate sidewalls, leading to non-uniform field controllability. Therefore, the buried-gate-based MoS₂ transistors where the gate electrodes are embedded into the silicon substrate are fabricated. The several device parameters such as field-effect mobil

SUBMITTER: Lee JA 

PROVIDER: S-EPMC10649149 | biostudies-literature | 2023 Oct

REPOSITORIES: biostudies-literature