3.5 × 3.5 μm² GaN blue micro-light-emitting diodes with negligible sidewall surface nonradiative recombination.

ABSTRACT: Micro-light-emitting diode displays are generating considerable interest as a promising technology for augmented-reality glasses. However, the fabrication of highly efficient and ultra-small ( <3 μm) micro-light-emitting diodes, which are required for augmented-reality applications, remains a major technical challenge due to the presence of strong sidewall nonradiative recombination. In this study, we demonstrate a 3.5 × 3.5 μm² blue GaN micro-light-emitting diode with negligible sidewall nonradiative recombination compared with bulk nonradiative recombination. We achieve this by using an ultralow-damage dry etching technique, known as neutral beam etching, to create the micro-light-emitting diode mesa. Our 3.5 × 3.5 μm² micro-light-emitting diode exhibits a low decre

SUBMITTER: Wang X 

PROVIDER: S-EPMC10663465 | biostudies-literature | 2023 Nov

REPOSITORIES: biostudies-literature