Engineering electrode interfaces for telecom-band photodetection in MoS₂/Au heterostructures via sub-band light absorption.

ABSTRACT: Transition metal dichalcogenide (TMD) layered semiconductors possess immense potential in the design of photonic, electronic, optoelectronic, and sensor devices. However, the sub-bandgap light absorption of TMD in the range from near-infrared (NIR) to short-wavelength infrared (SWIR) is insufficient for applications beyond the bandgap limit. Herein, we report that the sub-bandgap photoresponse of MoS₂/Au heterostructures can be robustly modulated by the electrode fabrication method employed. We observed up to 60% sub-bandgap absorption in the MoS₂/Au heterostructure, which includes the hybridized interface, where the Au layer was applied via sputter deposition. The greatly enhanced absorption of sub-bandgap light is due to the planar cavity formed by MoS₂ a

SUBMITTER: Hong C 

PROVIDER: S-EPMC10667329 | biostudies-literature | 2023 Nov

REPOSITORIES: biostudies-literature