Dataset Information

Resistive Switching in Bigraphene/Diamane Nanostructures Formed on a La₃Ga₅SiO₁₄ Substrate Using Electron Beam Irradiation.

ABSTRACT: Memristors, resistive switching memory devices, play a crucial role in the energy-efficient implementation of artificial intelligence. This study investigates resistive switching behavior in a lateral 2D composite structure composed of bilayer graphene and 2D diamond (diamane) nanostructures formed using electron beam irradiation. The resulting bigraphene/diamane structure exhibits nonlinear charge carrier transport behavior and a significant increase in resistance. It is shown that the resistive switching of the nanostructure is well controlled using bias voltage. The impact of an electrical field on the bonding of diamane-stabilizing functional groups is investigated. By subjecting the lateral bigraphene/diamane/bigraphene nanostructure to a sufficiently strong electric field, the migration of hydrogen ions and/or oxygen-related groups located on one or both sides of the nanostructure can occur. This process leads to the disruption of sp³ carbon bonds, restoring the high conductivity of bigraphene.

SUBMITTER: Emelin EV

PROVIDER: S-EPMC10674167 | biostudies-literature | 2023 Nov

REPOSITORIES: biostudies-literature

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Publications

Resistive Switching in Bigraphene/Diamane Nanostructures Formed on a La3Ga5SiO14 Substrate Using Electron Beam Irradiation.

Emelin Evgeny V EV Cho Hak Dong HD Korepanov Vitaly I VI Varlamova Liubov A LA Klimchuk Darya O DO Erohin Sergey V SV Larionov Konstantin V KV Kim Deuk Young DY Sorokin Pavel B PB Panin Gennady N GN

Nanomaterials (Basel, Switzerland) 20231120 22

Memristors, resistive switching memory devices, play a crucial role in the energy-efficient implementation of artificial intelligence. This study investigates resistive switching behavior in a lateral 2D composite structure composed of bilayer graphene and 2D diamond (diamane) nanostructures formed using electron beam irradiation. The resulting bigraphene/diamane structure exhibits nonlinear charge carrier transport behavior and a significant increase in resistance. It is shown that the resistiv ...[more]

PMID: 37999332

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Project description:A Pt-nanocoated layer (thickness of approx. 10-20 nm) with Pt-O-Ce bonds was created through the water radiolysis reaction on a CeO x nanowire (NW), which was induced by electron beam irradiation to the mixed suspension of K2PtCl4 aqueous solution and the CeO x NW. In turn, when Pt-nanocoated CeO x NW/C (Pt/C ratio = 0.2) was used in the cathode layer of a membrane electrode assembly (MEA), both an improved fuel cell performance and stability were achieved. The fuel cell performance observed for the MEA using Pt-nanocoated CeO x NW/C with Pt-O-Ce bonds, which was prepared using the electron beam irradiation method, improved and maintained its performance (observed cell potential of approximately 0.8 V at 100 mW cm-2) from 30 to 140 h after the start of operation. In addition, the activation overpotential at 100 mA cm-2 (0.17 V) obtained for MEA using Pt-nanocoated CeO x NW/C was approximately half of the value at 100 mA cm-2 (0.35 V) of MEA using a standard Pt/C cathode. In contrast, the fuel cell performance (0.775 V at 100 mW cm-2 after 80 h of operation) of MEA using a nanosized Pt-loaded CeO x NW (Pt/C = 0.2), which was prepared using the conventional chemical reduction method, was lower than that of MEA using a Pt-nanocoated CeO x /C cathode and showed reduction after 80 h of operation. It is considered why the nanocoated layer having Pt-O-Ce bonds heterogeneously formed on the surface of the CeO x NW and the bare CeO2 surface consisting of Ce4+ cations would become unstable in an acidic atmosphere. Furthermore, when a conventional low-amount Pt/C cathode (Pt/C = 0.04) was used as the cathode layer of the MEA, its stable performance could not be measured after 80 h of operation as a result of flooding caused by a lowering of electrocatalytic activity on the Pt/C cathode in the MEA. In contrast, a low-amount Pt-nanocoated CeO x NW (Pt/C = 0.04) could maintain a low activation overpotential (0.22 V at 100 mA cm-2) of MEA at the same operation time. Our surface first-principles modeling indicates that the high quality and stable performance observed for the Pt-nanocoated CeO x NW cathode of MEA can be attributed to the formation of a homogeneous electric double layer on the sample. Since the MEA performance can be improved by examining a more effective method of electron beam irradiation to all surfaces of the sample, the present work result shows the usefulness of the electron beam irradiation method in preparing active surfaces. In addition, the quantum beam technology such as the electron beam irradiation method was shown to be useful for increasing both performance and stability of fuel cells.

Dataset Information

Resistive Switching in Bigraphene/Diamane Nanostructures Formed on a La₃Ga₅SiO₁₄ Substrate Using Electron Beam Irradiation.

Publications

Resistive Switching in Bigraphene/Diamane Nanostructures Formed on a La<sub>3</sub>Ga<sub>5</sub>SiO<sub>14</sub> Substrate Using Electron Beam Irradiation.

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