Resistive Switching in Bigraphene/Diamane Nanostructures Formed on a La₃Ga₅SiO₁₄ Substrate Using Electron Beam Irradiation.

ABSTRACT: Memristors, resistive switching memory devices, play a crucial role in the energy-efficient implementation of artificial intelligence. This study investigates resistive switching behavior in a lateral 2D composite structure composed of bilayer graphene and 2D diamond (diamane) nanostructures formed using electron beam irradiation. The resulting bigraphene/diamane structure exhibits nonlinear charge carrier transport behavior and a significant increase in resistance. It is shown that the resistive switching of the nanostructure is well controlled using bias voltage. The impact of an electrical field on the bonding of diamane-stabilizing functional groups is investigated. By subjecting the lateral bigraphene/diamane/bigraphene nanostructure to a sufficiently strong electric field, the migrat

SUBMITTER: Emelin EV 

PROVIDER: S-EPMC10674167 | biostudies-literature | 2023 Nov

REPOSITORIES: biostudies-literature