Nucleation and Growth of GaAs on a Carbon Release Layer by Halide Vapor Phase Epitaxy.

ABSTRACT: We couple halide vapor phase epitaxy (HVPE) growth of III-V materials with liftoff from an ultrathin carbon release layer to address two significant cost components in III-V device - epitaxial growth and substrate reusability. We investigate nucleation and growth of GaAs layers by HVPE on a thin amorphous carbon layer that can be mechanically exfoliated, leaving the substrate available for reuse. We study nucleation as a function of carbon layer thickness and growth rate and find island-like nucleation. We then study various GaAs growth conditions, including V/III ratio, growth temperature, and growth rate in an effort to minimize film roughness. High growth rates and thicker films lead to drastically smoother surfaces with reduced threading dislocation density. Finally, we grow an initial

SUBMITTER: Roberts DM 

PROVIDER: S-EPMC10688164 | biostudies-literature | 2023 Nov

REPOSITORIES: biostudies-literature