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One-pot synthesis of Ag-In-Ga-S nanocrystals embedded in a Ga2O3 matrix and enhancement of band-edge emission by Na+ doping.

ABSTRACT: I-III-VI-based semiconductor quantum dots (QDs) have been intensively explored because of their unique controllable optoelectronic properties. Here we report one-pot synthesis of Na-doped Ag-In-Ga-S (AIGS) QDs incorporated in a Ga2O3 matrix. The obtained QDs showed a sharp band-edge photoluminescence peak at 557 nm without a broad-defect site emission. The PL quantum yield (QY) of such QDs was 58%, being much higher than that of AIGS QDs without Na+ doping, 29%. The obtained Na-doped AIGS/Ga2O3 composite particles were used as an emitting layer of green QD light-emitted diodes. A sharp electroluminescence (EL) peak was observed at 563 nm, being similar to that in the PL spectrum of the QDs used. The external quantum efficiency of the device was 0.6%.

SUBMITTER: Tozawa M 

PROVIDER: S-EPMC10696949 | biostudies-literature | 2023 Dec

REPOSITORIES: biostudies-literature

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One-pot synthesis of Ag-In-Ga-S nanocrystals embedded in a Ga<sub>2</sub>O<sub>3</sub> matrix and enhancement of band-edge emission by Na<sup>+</sup> doping.

Tozawa Makoto M   Miyamae Chie C   Akiyoshi Kazutaka K   Kameyama Tatsuya T   Yamamoto Takahisa T   Motomura Genichi G   Fujisaki Yoshihide Y   Uematsu Taro T   Kuwabata Susumu S   Torimoto Tsukasa T  

Nanoscale advances 20231114 24

I-III-VI-based semiconductor quantum dots (QDs) have been intensively explored because of their unique controllable optoelectronic properties. Here we report one-pot synthesis of Na-doped Ag-In-Ga-S (AIGS) QDs incorporated in a Ga<sub>2</sub>O<sub>3</sub> matrix. The obtained QDs showed a sharp band-edge photoluminescence peak at 557 nm without a broad-defect site emission. The PL quantum yield (QY) of such QDs was 58%, being much higher than that of AIGS QDs without Na<sup>+</sup> doping, 29%.  ...[more]

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