High-Performance Biomemristor Embedded with Graphene Quantum Dots.

ABSTRACT: By doping a dielectric layer material and improving the device's structure, the electrical characteristics of a memristor can be effectively adjusted, and its application field can be expanded. In this study, graphene quantum dots are embedded in the dielectric layer to improve the performance of a starch-based memristor, and the PMMA layer is introduced into the upper and lower interfaces of the dielectric layer. The experimental results show that the switching current ratio of the Al/starch: GQDs/ITO device was 10² times higher than that of the Al/starch/ITO device. However, the switching current ratio of the Al/starch: GQDs/ITO device was further increased, and the set voltage was reduced (-0.75 V) after the introduction of the PMMA layer. The introduction of GQDs and PMMA la

SUBMITTER: Wang L 

PROVIDER: S-EPMC10708532 | biostudies-literature | 2023 Nov

REPOSITORIES: biostudies-literature