Defeating depolarizing fields with artificial flux closure in ultrathin ferroelectrics.

ABSTRACT: Material surfaces encompass structural and chemical discontinuities that often lead to the loss of the property of interest in so-called dead layers. It is particularly problematic in nanoscale oxide electronics, where the integration of strongly correlated materials into devices is obstructed by the thickness threshold required for the emergence of their functionality. Here we report the stabilization of ultrathin out-of-plane ferroelectricity in oxide heterostructures through the design of an artificial flux-closure architecture. Inserting an in-plane-polarized ferroelectric epitaxial buffer provides the continuity of polarization at the interface; despite its insulating nature, we observe the emergence of polarization in our out-of-plane-polarized model of ferroelectric BaTiO₃

SUBMITTER: Gradauskaite E 

PROVIDER: S-EPMC10713449 | biostudies-literature | 2023 Dec

REPOSITORIES: biostudies-literature