Record high room temperature resistance switching in ferroelectric-gated Mott transistors unlocked by interfacial charge engineering.

ABSTRACT: The superior size and power scaling potential of ferroelectric-gated Mott transistors makes them promising building blocks for developing energy-efficient memory and logic applications in the post-Moore's Law era. The close to metallic carrier density in the Mott channel, however, imposes the bottleneck for achieving substantial field effect modulation via a solid-state gate. Previous studies have focused on optimizing the thickness, charge mobility, and carrier density of single-layer correlated channels, which have only led to moderate resistance switching at room temperature. Here, we report a record high nonvolatile resistance switching ratio of 38,440% at 300 K in a prototype Mott transistor consisting of a ferroelectric PbZr_0.2Ti_0.8O₃ gate and an RNiO

SUBMITTER: Hao Y 

PROVIDER: S-EPMC10716183 | biostudies-literature | 2023 Dec

REPOSITORIES: biostudies-literature