Study of Ion Velocity Effect on the Band Gap of CVD-Grown Few-Layer MoS₂.

ABSTRACT: The present work reports on a simple chemical vapor deposition (CVD) technique that employs alkali halide (NaCl) to synthesize high-quality few-layer MoS₂ by reducing growth temperature from 850 to 650 °C, and its ion irradiation study for band gap modification. The Raman peak position difference of A_1g to E¹_2g of ≈24.5 cm^-1 for the synthesized MoS₂ corresponds to a few layers (<5 monolayers) of MoS₂ on the substrate, as also confirmed by atomic force microscopy (AFM). The optical image shows the continuous distribution of flakes throughout the substrate and the average area of flakes ≈0.2 μm² as confirmed by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) analysis. Swift h

SUBMITTER: Khan M 

PROVIDER: S-EPMC10719992 | biostudies-literature | 2023 Dec

REPOSITORIES: biostudies-literature