Shallow Silicon Vacancy Centers with Lifetime-Limited Optical Linewidths in Diamond Nanostructures.

ABSTRACT: The negatively charged silicon vacancy center (SiV^-) in diamond is a promising, yet underexplored candidate for single-spin quantum sensing at sub-kelvin temperatures and tesla-range magnetic fields. A key ingredient for such applications is the ability to perform all-optical, coherent addressing of the electronic spin of near-surface SiV^- centers. We present a robust and scalable approach for creating individual, ∼50 nm deep SiV^- with lifetime-limited optical linewidths in diamond nanopillars through an easy-to-realize and persistent optical charge-stabilization scheme. The latter is based on single, prolonged 445 nm laser illumination that enables continuous photoluminescence excitation spectroscopy without the need for any further charge stabilization or

SUBMITTER: Zuber JA 

PROVIDER: S-EPMC10722541 | biostudies-literature | 2023 Dec

REPOSITORIES: biostudies-literature