Silicon Nanowire Phototransistor Arrays for CMOS Image Sensor Applications.

ABSTRACT: This paper introduces a new design of silicon nanowire (Si NW) phototransistor (PT) arrays conceived explicitly for improved CMOS image sensor performance, and comprehensive numerical investigations clarify the characteristics of the proposed devices. Each unit within this array architecture features a top-layer vertical Si NW optimized for the maximal absorption of incoming light across the visible spectrum. This absorbed light generates carriers, efficiently injected into the emitter-base junction of an underlying npn bipolar junction transistor (BJT). This process induces proficient amplification of the output collector current. By meticulously adjusting the diameters of the NWs, the PTs are tailored to exhibit distinct absorption characteristics, thus delineating the visible spectrum's

SUBMITTER: Jun H 

PROVIDER: S-EPMC10748017 | biostudies-literature | 2023 Dec

REPOSITORIES: biostudies-literature