Sub-10 μm-Thick Ge Thin Film Fabrication from Bulk-Ge Substrates via a Wet Etching Method.

ABSTRACT: Low-defect density Ge thin films are crucial for studying the impact of defect density on the performance limits of Ge-based optical devices (optical detectors, LEDs, and lasers). Ge thinning is also important for Ge-based multijunction solar cells. In this work, Ge wet etching using three acidic H₂O₂ solutions (HF, HCl, and H₂SO₄) was studied in terms of etching rate, surface morphology, and surface roughness. HCl-H₂O₂-H₂O (1:1:5) was demonstrated to wet-etch 535 μm-thick bulk-Ge substrates to 4.1 μm with a corresponding RMS surface roughness of 10 nm, which was the thinnest Ge film from bulk-Ge via a wet etching method to the best of our knowledge. The good quality of pre-etched bulk-Ge was preserved, and the lo

SUBMITTER: Wang L 

PROVIDER: S-EPMC10753562 | biostudies-literature | 2023 Dec

REPOSITORIES: biostudies-literature