Ultrashort vertical-channel MoS₂ transistor using a self-aligned contact.

ABSTRACT: Two-dimensional (2D) semiconductors hold great promises for ultra-scaled transistors. In particular, the gate length of MoS₂ transistor has been scaled to 1 nm and 0.3 nm using single wall carbon nanotube and graphene, respectively. However, simultaneously scaling the channel length of these short-gate transistor is still challenging, and could be largely attributed to the processing difficulties to precisely align source-drain contact with gate electrode. Here, we report a self-alignment process for realizing ultra-scaled 2D transistors. By mechanically folding a graphene/BN/MoS₂ heterostructure, source-drain metals could be precisely aligned around the folded edge, and the channel length is only dictated by heterostructure thickness. Together, we could realize sub-1

SUBMITTER: Liu L 

PROVIDER: S-EPMC10761794 | biostudies-literature | 2024 Jan

REPOSITORIES: biostudies-literature