Isotope engineering for spin defects in van der Waals materials.

ABSTRACT: Spin defects in van der Waals materials offer a promising platform for advancing quantum technologies. Here, we propose and demonstrate a powerful technique based on isotope engineering of host materials to significantly enhance the coherence properties of embedded spin defects. Focusing on the recently-discovered negatively charged boron vacancy center ([Formula: see text]) in hexagonal boron nitride (hBN), we grow isotopically purified h¹⁰B¹⁵N crystals. Compared to [Formula: see text] in hBN with the natural distribution of isotopes, we observe substantially narrower and less crowded [Formula: see text] spin transitions as well as extended coherence time T₂ and relaxation time T₁. For quantum sensing, [Formula: see text] centers in our h¹⁰

SUBMITTER: Gong R 

PROVIDER: S-EPMC10761865 | biostudies-literature | 2024 Jan

REPOSITORIES: biostudies-literature