The growth of Ge and direct bandgap Ge_1-xSn_x on GaAs (001) by molecular beam epitaxy.

ABSTRACT: Germanium tin (GeSn) is a tuneable narrow bandgap material, which has shown remarkable promise for the industry of near- and mid-infrared technologies for high efficiency photodetectors and laser devices. Its synthesis is challenged by the lattice mismatch between the GeSn alloy and the substrate on which it is grown, sensitively affecting its crystalline and optical qualities. In this article, we investigate the growth of Ge and GeSn on GaAs (001) substrates using two different buffer layers consisting of Ge/GaAs and Ge/AlAs via molecular beam epitaxy. The quality of the Ge layers was compared using X-ray diffraction, atomic force microscopy, reflection high-energy electron diffraction, and photoluminescence. The characterization techniques demonstrate high-quality Ge layers, inclu

SUBMITTER: Gunder C 

PROVIDER: S-EPMC10762728 | biostudies-literature | 2024 Jan

REPOSITORIES: biostudies-literature