Graphene binding on black phosphorus enables high on/off ratios and mobility.

ABSTRACT: Graphene is one of the most promising candidates for integrated circuits due to its robustness against short-channel effects, inherent high carrier mobility and desired gapless nature for Ohmic contact, but it is difficult to achieve satisfactory on/off ratios even at the expense of its carrier mobility, limiting its device applications. Here, we present a strategy to realize high back-gate switching ratios in a graphene monolayer with well-maintained high mobility by forming a vertical heterostructure with a black phosphorus multi-layer. By local current annealing, strain is introduced within an established area of the graphene, which forms a reflective interface with the rest of the strain-free area and thus generates a robust off-state via local current depletion. Applying a positive ba

SUBMITTER: Lin F 

PROVIDER: S-EPMC10776355 | biostudies-literature | 2024 Feb

REPOSITORIES: biostudies-literature