Quantized anomalous Hall resistivity achieved in molecular beam epitaxy-grown MnBi₂Te₄ thin films.

ABSTRACT: The intrinsic magnetic topological insulator MnBi₂Te₄ provides a feasible pathway to the high-temperature quantum anomalous Hall (QAH) effect as well as various novel topological quantum phases. Although quantized transport properties have been observed in exfoliated MnBi₂Te₄ thin flakes, it remains a big challenge to achieve molecular beam epitaxy (MBE)-grown MnBi₂Te₄ thin films even close to the quantized regime. In this work, we report the realization of quantized anomalous Hall resistivity in MBE-grown MnBi₂Te₄ thin films with the chemical potential tuned by both controlled in situ oxygen exposure and top gating. We find that elongated post-annealing obviously elevates the temperature to achi

SUBMITTER: Bai Y 

PROVIDER: S-EPMC10776363 | biostudies-literature | 2024 Feb

REPOSITORIES: biostudies-literature