Growth and Structural Characterization of h-LuMnO₃ Thin Films Deposited by Direct MOCVD.

ABSTRACT: In this work, we investigated the MOCVD conditions to synthesize thin films with the hexagonal P6₃cm h-LuMnO₃ phase as a potential low-band gap ferroelectric material. The main parameters investigated were the ratio of organometallic starting materials, substrate temperature, and annealing effect. Two different substrates were used in the study: fused silica (SiO₂) glass and platinized silicon (Pt\Ti\SiO₂\Si(100)). In order to investigate the thermodynamic stability and quality of the developed phases, a detailed analysis of the crystal structure, microstructure, morphology, and roughness of the films was performed by X-ray diffractometer, scanning electron microscopy (SEM), energy dispersive spectrometry (EDS), Raman spectroscopy, and pie

SUBMITTER: Ait Bassou A 

PROVIDER: S-EPMC10780143 | biostudies-literature | 2023 Dec

REPOSITORIES: biostudies-literature