Two-Channel Indirect-Gap Photoluminescence and Competition between the Conduction Band Valleys in Few-Layer MoS₂.

ABSTRACT: MoS₂ is a two-dimensional layered transition metal dichalcogenide with unique electronic and optical properties. The fabrication of ultrathin MoS₂ is vitally important, since interlayer interactions in its ultrathin varieties will become thickness-dependent, providing thickness-governed tunability and diverse applications of those properties. Unlike with a number of studies that have reported detailed information on direct bandgap emission from MoS₂ monolayers, reliable experimental evidence for thickness-induced evolution or transformation of the indirect bandgap remains scarce. Here, the sulfurization of MoO₃ thin films with nominal thicknesses of 30 nm, 5 nm and 3 nm was performed. All sulfurized samples were examined at room temperature with

SUBMITTER: Bayramov AH 

PROVIDER: S-EPMC10780461 | biostudies-literature | 2023 Dec

REPOSITORIES: biostudies-literature