Revealing the quantum nature of the voltage-induced conductance changes in oxygen engineered yttrium oxide-based RRAM devices.

ABSTRACT: In this work, the quasi-analog to discrete transition occurring in the current-voltage characteristic of oxygen engineered yttrium oxide-based resistive random-access memory (RRAM) devices is investigated in detail. In particular, the focus of our research is not on the absolute conductance values of this characteristic but on the magnitude of its conductance changes occurring during the reset process of the device. It is found that the detected changes correspond to conductance values predominantly of the order of the quantum unit of conductance G₀ = 2e²/h, where e is the electron charge and h the Planck constant. This feature is observed even at conductance levels far above G₀, i.e. where electron transport is seemingly diffusive. It is also observed that

SUBMITTER: Aguirre FL 

PROVIDER: S-EPMC10784569 | biostudies-literature | 2024 Jan

REPOSITORIES: biostudies-literature