Direct Imaging of Carrier Funneling in a Dielectric Engineered 2D Semiconductor.

ABSTRACT: In atomically thin transition-metal dichalcogenides (TMDCs), the environmental sensitivity of the strong Coulomb interaction offers promising approaches to create spatially varying potential landscapes in the same continuous material by tuning its dielectric environment. Thus, allowing for control of transport. However, a scalable and CMOS-compatible method for achieving this is required to harness these effects in practical applications. In addition, because of their ultrashort lifetime, observing the spatiotemporal dynamics of carriers in monolayer TMDCs, on the relevant time scale, is challenging. Here, we pattern and deposit a thin film of hafnium oxide (HfO₂) via atomic layer deposition (ALD) on top of a monolayer of WSe₂. This allows for the engineering of the d

SUBMITTER: Gauriot N 

PROVIDER: S-EPMC10786151 | biostudies-literature | 2024 Jan

REPOSITORIES: biostudies-literature