Phase-Change Memory from Molecular Tellurides.

ABSTRACT: Phase-change memory (PCM) is an emerging memory technology based on the resistance contrast between the crystalline and amorphous states of a material. Further development and realization of PCM as a mainstream memory technology rely on innovative materials and inexpensive fabrication methods. Here, we propose a generalizable and scalable solution-processing approach to synthesize phase-change telluride inks in order to meet demands for high-throughput material screening, increased energy efficiency, and advanced device architectures. Bulk tellurides, such as Sb₂Te₃, GeTe, Sc₂Te₃, and TiTe₂, are dissolved and purified to obtain inks of molecular metal telluride complexes. This allowed us to unlock a wide range of solution-processed ter

SUBMITTER: Schenk FM 

PROVIDER: S-EPMC10786157 | biostudies-literature | 2024 Jan

REPOSITORIES: biostudies-literature