Integrated In-Memory Sensor and Computing of Artificial Vision Based on Full-vdW Optoelectronic Ferroelectric Field-Effect Transistor.

ABSTRACT: The development and application of artificial intelligence have led to the exploitation of low-power and compact intelligent information-processing systems integrated with sensing, memory, and neuromorphic computing functions. The 2D van der Waals (vdW) materials with abundant reservoirs for arbitrary stacking based on functions and enabling continued device downscaling offer an attractive alternative for continuously promoting artificial intelligence. In this study, full 2D SnS₂ /h-BN/CuInP₂ S₆ (CIPS)-based ferroelectric field-effect transistors (Fe-FETs) and utilized light-induced ferroelectric polarization reversal to achieve excellent memory properties and multi-functional sensing-memory-computing vision simulations are designed. The device exhibits a h

SUBMITTER: Wang P 

PROVIDER: S-EPMC10797471 | biostudies-literature | 2024 Jan

REPOSITORIES: biostudies-literature